Modeling and Simulation of LDO Voltage Regulator Susceptibility to Conducted EMI

Author

Jianfei Wu ; Boyer, A. ; Jiancheng Li ; Vrignon, Bertrand ; Ben Dhia, S. ; Sicard, Etienne ; Rongjun Shen

Author_Institution

Sch. of Electron. Sci. & Eng., Nat. Univ. of Defense Technol., Changsha, China

Volume

56

Issue

3

fYear

2014

fDate

Jun-14

Firstpage

726

Lastpage

735

Abstract

This paper presents a methodology dedicated to modeling and simulation of low-dropout (LDO) voltage regulator susceptibility to conducted electromagnetic interference (EMI). A test chip with a simple LDO structure was designed for EMC test and analysis. A transistor-level model, validated by functional tests, Z-parameter characterization and direct power injection (DPI) measurements, is used to predict the immunity of the LDO regulator. Different levels of model extraction reveal the weight contributions of subcircuits and parasitic elements on immunity issues. The DPI measurement results show a good fit with model prediction up to 1 GHz.

Keywords

electromagnetic compatibility; electromagnetic interference; immunity testing; voltage regulators; DPI measurements; EMC analysis; EMC test; EMI; LDO regulator immunity; LDO voltage regulator susceptibility; Z-parameter characterization; conducted electromagnetic interference; direct power injection measurements; functional tests; low-dropout voltage regulator susceptibility; model extraction; parasitic elements; subcircuits; test chip; transistor-level model; Capacitors; Electromagnetic interference; Immunity testing; Integrated circuit modeling; Photonic band gap; Regulators; Semiconductor device measurement; Direct power injection (DPI); Z-parameter; electromagnetic interference (EMI); interference propagation; low-dropout (LDO) voltage regulator; parasitic elements; susceptibility;

fLanguage

English

Journal_Title

Electromagnetic Compatibility, IEEE Transactions on

Publisher

ieee

ISSN

0018-9375

Type

jour

DOI

10.1109/TEMC.2013.2294951

Filename

6695801