A Multiband RF Antenna Duplexer on CMOS: Design and Performance

Author

Mikhemar, Mohyee ; Darabi, Hooman ; Abidi, Asad A.

Author_Institution

Electr. Eng. Dept., Univ. of California, Los Angeles, Los Angeles, CA, USA

Volume

48

Issue

9

fYear

2013

fDate

Sept. 2013

Firstpage

2067

Lastpage

2077

Abstract

An RF duplexer has been fabricated on a CMOS IC for use in 3G/4G cellular transceivers. The passive circuit sustains large voltage swings in the transmit path, and isolates the receive path from the transmitter by more than 45 dB across a bandwidth of 200 MHz in 3G/4G bands I, II, III, IV, and IX. A low noise amplifier embedded into the duplexer demonstrates a cascade noise figure of 5 dB with more than 27 dB of gain. The duplexer inserts 2.5 dB of loss between power amplifier and antenna.

Keywords

CMOS integrated circuits; antennas; cellular radio; low noise amplifiers; multiplexing equipment; radio transceivers; 3G-4G cellular transceivers; bandwidth 200 MHz; loss 2.5 dB; low noise amplifier; multiband RF antenna duplexer; noise figure 5 dB; passive circuit; receive path; transmit path; Antennas; Bridge circuits; Coils; Noise; Ports (Computers); Radio frequency; Resistors; 3G; Antenna tuning unit; CMOS; FDD; autotransformer; balancing network; bridge network; diplexer; duplexer; electrical balance; full-duplex; hybrid transformer; isolation; noise matching; reciprocal circuit; transmitter leakage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2013.2264626

Filename

6544685