W-band InP DHBT MMIC power amplifiers

Author

Ellis, Grant A. ; Kurdoghlian, Ara ; Bowen, Ross ; Wetzel, Mike ; Delaney, Mike

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

Volume

1

fYear

2004

fDate

6-11 June 2004

Firstpage

231

Abstract

A W-band DHBT power amplifier chip set consisting of a cascode power amplifier and a driver amplifier fabricated in InP technology is reported. The cascode power amplifier has a total of 160 um₂ of emitter area and results in a power gain of 8.5 dB and saturated output power of more than 14.4 dBm at 94.5 GHz. The driver power amplifier provides a peak signal gain of 9.8 dB at 102 GHz and peak saturated output power of 9.5 dBm at 94.7 GHz. To the author´s knowledge, this is the highest reported output power and gain above 90 GHz for an HBT amplifier.

Keywords

III-V semiconductors; MMIC power amplifiers; driver circuits; heterojunction bipolar transistors; indium compounds; integrated circuit design; 102 GHz; 8.5 dB; 9.8 dB; 94.5 GHz; 94.7 GHz; InP; MMIC power amplifier; W-band DHBT power amplifier; amplifier fabrication; cascode power amplifier; driver amplifier; driver power amplifier; emitter area; peak saturated output power; peak signal gain; power amplifier chip set; power gain; DH-HEMTs; Driver circuits; Gain; Heterojunction bipolar transistors; Indium phosphide; MMICs; Power amplifiers; Power generation; Power measurement; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1335853

Filename

1335853