Over 65% efficiency 300 MHz bandwidth C-band internally-matched GaAs FET designed with a large-signal FET model

Author

Otsuka, Hiroshi ; Mori, Kazutomi ; Yukawa, Hidenori ; Minamide, Hiroaki ; Kittaka, Yoshinori ; Tsunoda, Toshiyasu ; Ogura, Satoshi ; Ikeda, Yukio ; Takagi, Tadashi

Author_Institution

Inf. Technol. R&D Center, Mitsubishi Electr. Corp., Kamakura, Japan

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

521

Abstract

Over 65% efficiency 300MHz bandwidth C-band internally-matched GaAs FET has been developed by using a large-signal FET model. In order to achieve high efficiency in broad-band, optimum impedances at each frequency are estimated by using the large-signal FET model. The large-signal FET model is based on Angelov model. The capacitance equations of the model are improved to satisfy charge conservation. The model parameters are extracted for a unit cell FET with a small gate width. The unit cell FET model was scaled up to one chip FET model with a wide gate width, considering increase of source inductance by sharing via holes. The developed C-band internally-matched FET has achieved power-added efficiency (PAE) of over 65% across 300MHz bandwidth.

Keywords

III-V semiconductors; UHF field effect transistors; gallium arsenide; inductance; semiconductor device models; 300 MHz; Angelov model; C-band internally-matched GaAs FET; GaAs; capacitance equations; charge conservation; inductance; large-signal FET model; optimum impedances; power added efficiency; Bandwidth; Capacitance; Circuit simulation; Equations; FETs; Frequency estimation; Gallium arsenide; Impedance; Optical amplifiers; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1336030

Filename

1336030