BSIM4 high-frequency model verification for 0.13 μm RF-CMOS technology

Author

Yang, M.T. ; Ho, Patricia P C ; Lin, C.K. ; Yeh, T.J. ; Wang, Y.J. ; Voinigescu, Sorin P. ; Tazlauanu, Mihai ; Chia, Y.T. ; Young, K.L.

Author_Institution

TSMC, Hsin-Chu, Taiwan

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

1049

Abstract

A compact model capable of simulating both DC and RF characteristics is highly desirable. This work is the first report of an extensive experimental evaluation of the accuracy of the BSIM4 model at high frequencies using a 0.13 μm RF-CMOS process. The accuracy of the model is verified on both N-channel and P-channel devices through small-signal S-parameter measurements up to 50 GHz, 1/f noise measurements, and noise figure measurements in the 2-GHz to 6-GHz range.

Keywords

1/f noise; CMOS integrated circuits; MOSFET; S-parameters; high-frequency effects; integrated circuit modelling; integrated circuit noise; radiofrequency integrated circuits; system-on-chip; 0.13 micron; 1/f noise measurements; 2 to 6 GHz; 50 GHz; BSIM4 high frequency model; DC simulation; MOSFET; N-channel devices; P-channel devices; RF-CMOS technology; SOC; complementry metal oxide semiconductor; metal oxide semiconductor FET; noise figure measurements; small signal S parameter; system-on-chip; CMOS process; CMOS technology; Electrical resistance measurement; MOSFETs; Noise measurement; Radio frequency; Scattering parameters; Semiconductor device modeling; System-on-a-chip; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1339164

Filename

1339164