A power efficient W-CDMA smart power amplifier with emitter area adjusted for output power levels

Author

Kim, Ji Hoon ; Kim, Ki Young ; Choi, Yun Ho ; Park, Chul Soon

Author_Institution

Sch. of Eng., Inf. & Commun. Univ., South Korea

Volume

2

fYear

2004

fDate

6-11 June 2004

Firstpage

1165

Abstract

We demonstrate a power efficient HBT MMIC smart power amplifier to provide improved power efficiency for W-CDMA mobile terminals. A small part of amplifier transistors is activated selectively to deliver output power with improved efficiency for low power mode of 16 dBm, and the PAE (power added efficiency) is increased by a factor of 1.8 using 21 mA of a quiescent current. At a high power mode, the MMIC reveals 27 dBm output power with the PAE of 33.4%. From this approach the battery lifetime can be extended as much as 2.5 times through calculating overall average power usage efficiency. The fabricated chip size is as small as 0.95×1 mm² including input/inter-stage matching network and all active bias circuits.

Keywords

III-V semiconductors; MMIC power amplifiers; code division multiple access; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; integrated circuit design; power integrated circuits; 21 mA; HBT MMIC smart power amplifier; InGaP-GaAs; PAE; active bias circuits; amplifier transistors; battery lifetime; input-inter-stage matching network; power added efficiency; power efficient W-CDMA; Batteries; Driver circuits; Heterojunction bipolar transistors; High power amplifiers; Impedance matching; MMICs; Multiaccess communication; Operational amplifiers; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2004 IEEE MTT-S International

ISSN

0149-645X

Print_ISBN

0-7803-8331-1

Type

conf

DOI

10.1109/MWSYM.2004.1339193

Filename

1339193