Title :
Direct measurement of thermal circuit parameters using pulsed IV and the normalized difference unit
Author :
Baylis, Charles P. ; Dunleavy, Lawrence P. ; Daniel, John E.
Author_Institution :
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Abstract :
New methods are presented for direct extraction of thermal resistance and capacitance from pulsed IV measurements. Because thermal effects are frequency dependent, a thermal circuit is used in many models to characterize the device channel temperature as a function of frequency. Thermal resistance is determined using pulsed IV data sets taken at varied ambient temperature, while the thermal capacitance is found through use of a new normalized difference unit (NDU) for IV data. Determination of thermal subcircuit parameters from readily available pulsed IV measurements reduces the complexity of electrothermal model development for microwave transistors.
Keywords :
MOSFET; capacitance; capacitance measurement; thermal resistance measurement; device channel temperature; electrothermal model development; microwave transistors; normalized difference unit; thermal capacitance; thermal circuit parameters; thermal effects; thermal resistance; thermal subcircuit parameters; Capacitance measurement; Data mining; Electrical resistance measurement; Electrothermal effects; Frequency dependence; Microwave measurements; Pulse circuits; Pulse measurements; Temperature dependence; Thermal resistance;
Conference_Titel :
Microwave Symposium Digest, 2004 IEEE MTT-S International
Print_ISBN :
0-7803-8331-1
DOI :
10.1109/MWSYM.2004.1339211