DocumentCode
420488
Title
Direct measurement of thermal circuit parameters using pulsed IV and the normalized difference unit
Author
Baylis, Charles P. ; Dunleavy, Lawrence P. ; Daniel, John E.
Author_Institution
Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
Volume
2
fYear
2004
fDate
6-11 June 2004
Firstpage
1233
Abstract
New methods are presented for direct extraction of thermal resistance and capacitance from pulsed IV measurements. Because thermal effects are frequency dependent, a thermal circuit is used in many models to characterize the device channel temperature as a function of frequency. Thermal resistance is determined using pulsed IV data sets taken at varied ambient temperature, while the thermal capacitance is found through use of a new normalized difference unit (NDU) for IV data. Determination of thermal subcircuit parameters from readily available pulsed IV measurements reduces the complexity of electrothermal model development for microwave transistors.
Keywords
MOSFET; capacitance; capacitance measurement; thermal resistance measurement; device channel temperature; electrothermal model development; microwave transistors; normalized difference unit; thermal capacitance; thermal circuit parameters; thermal effects; thermal resistance; thermal subcircuit parameters; Capacitance measurement; Data mining; Electrical resistance measurement; Electrothermal effects; Frequency dependence; Microwave measurements; Pulse circuits; Pulse measurements; Temperature dependence; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2004 IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-8331-1
Type
conf
DOI
10.1109/MWSYM.2004.1339211
Filename
1339211
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