• DocumentCode
    420488
  • Title

    Direct measurement of thermal circuit parameters using pulsed IV and the normalized difference unit

  • Author

    Baylis, Charles P. ; Dunleavy, Lawrence P. ; Daniel, John E.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of South Florida, Tampa, FL, USA
  • Volume
    2
  • fYear
    2004
  • fDate
    6-11 June 2004
  • Firstpage
    1233
  • Abstract
    New methods are presented for direct extraction of thermal resistance and capacitance from pulsed IV measurements. Because thermal effects are frequency dependent, a thermal circuit is used in many models to characterize the device channel temperature as a function of frequency. Thermal resistance is determined using pulsed IV data sets taken at varied ambient temperature, while the thermal capacitance is found through use of a new normalized difference unit (NDU) for IV data. Determination of thermal subcircuit parameters from readily available pulsed IV measurements reduces the complexity of electrothermal model development for microwave transistors.
  • Keywords
    MOSFET; capacitance; capacitance measurement; thermal resistance measurement; device channel temperature; electrothermal model development; microwave transistors; normalized difference unit; thermal capacitance; thermal circuit parameters; thermal effects; thermal resistance; thermal subcircuit parameters; Capacitance measurement; Data mining; Electrical resistance measurement; Electrothermal effects; Frequency dependence; Microwave measurements; Pulse circuits; Pulse measurements; Temperature dependence; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2004 IEEE MTT-S International
  • ISSN
    0149-645X
  • Print_ISBN
    0-7803-8331-1
  • Type

    conf

  • DOI
    10.1109/MWSYM.2004.1339211
  • Filename
    1339211