Title :
Cavity ring-down spectroscopy of semiconductor quantum dots
Author :
Berry, J.J. ; Harvey, T.E. ; Mirin, R.P. ; Marian, A. ; Ye, J.
Author_Institution :
Div. of Optoelectron., Nat. Inst. of Stand. & Technol., Boulder, CO, USA
Abstract :
We employ cavity ring-down to perform absorption experiments of InGaAs/GaAs QDs. Integrating an AlAs/GaAs DBR incorporating InGaAs QD´s into a Fabry-Perot cavity, we demonstrate this approach and its potential for sensitive measurements on semiconductor nanostructures.
Keywords :
Fabry-Perot resonators; III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium arsenide; indium compounds; infrared spectra; optical materials; semiconductor quantum dots; AlAs-GaAs; AlAs/GaAs DBR; Fabry-Perot cavity; InGaAs-GaAs; InGaAs/GaAs quantum dots; absorption experiments; cavity ring-down spectroscopy; semiconductor nanostructures; semiconductor quantum dots; sensitive measurements;
Conference_Titel :
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
1-55752-777-6
