Optical Emission Characteristics of Pseudopolarization-Matched Green AlInGaN/InGaN Quantum Well Structures

Author

Seoung-Hwan Park ; Doyeol Ahn

Author_Institution

Dept. of Electron. Eng., Catholic Univ. of Daegu, Hayang, South Korea

Volume

19

Issue

5

fYear

2013

fDate

Sept.-Oct. 2013

Firstpage

1

Lastpage

8

Abstract

Optical properties of pseudopolarization-matched green AlInGaN/InGaN quantum-well structures with a quaternary AlInGaN well layer were investigated by using non-Markovian gain model with many-body effects. We found that the emission peak can be enhanced by using quaternary AlInGaN well and is sensitive to the In composition in the InGaN barrier. The spontaneous emission coefficient shows a maximum at In composition of 0.22 in the barrier and gradually decreases with increasing In composition. The spontaneous emission coefficient of the AlInGaN/InGaN system with reduced internal field is shown to be increased by 70% compared to that of the conventional InGaN/GaN system. B_eff of the AlInGaN/InGaN QW structure is much larger than that of the InGaN/GaN QW structure in the investigated range of the current density.

Keywords

III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; semiconductor quantum wells; spontaneous emission; wide band gap semiconductors; AlInGaN-InGaN; current density; emission peak; internal field; many-body effects; nonMarkovian gain model; optical emission characteristics; optical properties; pseudopolarization-matched green quantum well structures; quaternary well layer; spontaneous emission coefficient; Charge carrier density; Gallium; Gallium nitride; Optical polarization; Photonic band gap; Spontaneous emission; Stimulated emission; AlInGaN; GaN; InGaN; laser; optical gain; quantum well (QW);

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2013.2241024

Filename

6449278