DocumentCode
421982
Title
Selective quantum well intermixing of 1.22 and 1.55 /spl mu/m GaInNAs laser material
Author
Harris, J.L. ; Bryce, A.C. ; Kowalski, O.P. ; Marsh, J.H. ; Jouhti, T. ; Pessa, M. ; Hopkinson, Mark
Author_Institution
Dept. of Electr. & Electron. Eng., Glasgow Univ., UK
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
Selective quantum well intermixing in 1.22 and 1.55 /spl mu/m GaInNAs/GaAs laser structures using a sputtered silica cap deposition process is reported. Controlled wavelength shifts of 60 and 93 nm were obtained in 1.22 and 1.55 /spl mu/m material respectively.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optics; nitrogen compounds; optical materials; photoluminescence; quantum well lasers; semiconductor quantum wells; sputter deposition; 1.22 mum; 1.55 mum; 60 nm; 93 nm; GaInNAs laser material; GaInNAs-GaAs; selective quantum well intermixing; sputtered silica cap deposition; wavelength shifts;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361445
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