DocumentCode
422011
Title
Continuous-wave operation of InAsSb/InP quantum-dot lasers near 2 /spl mu/m at room temperature
Author
Qiu, Yueming ; Uhl, David ; Keo, Sam
Author_Institution
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
InAsSb quantum-dot lasers near 2 /spl mu/m were demonstrated in cw operation at room temperature with a threshold current density of below 1 kA/cm/sup 2/, output power of 3 mW/facet and a differential quantum efficiency of 13%.
Keywords
III-V semiconductors; arsenic compounds; current density; indium compounds; laser transitions; quantum dot lasers; 13 percent; InAsSb-InP; continuous-wave operation; differential quantum efficiency; quantum-dot lasers; room temperature; threshold current density;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361475
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