DocumentCode
422326
Title
Optimum design of silicon doping for emission enhancement of InGaN/GaN quantum well light-emitting devices
Author
Cheng, Yung-Chen ; Lin, En-Chiang ; Chen, Meng-Kuo ; Wu, Cheng-Ming ; Yang, C.C. ; Ma, Kung-Jen
Author_Institution
Graduate Inst. of Electro-Opt. Eng., Nat. Taiwan Univ., Taipei
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
InGaN/GaN quantum well samples of various silicon doping conditions, including doping layers and concentrations, are compared in nano-structures and emission characteristics for design optimization. The best performance of barrier-doped samples originates from stronger carrier localization
Keywords
elemental semiconductors; light emitting diodes; nanostructured materials; photoluminescence; semiconductor doping; semiconductor quantum wells; silicon; wide band gap semiconductors; InGaN/GaN quantum well light-emitting devices; carrier localization; design optimization; nanostructures; silicon doping;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361822
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