DocumentCode
422328
Title
Recent advances in AlGaN-based deep-UV LEDs
Author
Crawford, M.H. ; Fischer, A.J. ; Allerman, A.A. ; Bogart, K. R A ; Lee, S.R. ; Kaplar, R.J. ; Chow, W.W.
Author_Institution
Dept. of Semicond. Mater. & Device Sci., Sandia Nat. Labs., Albuquerque, NM
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
We will overview the challenges and performance of AlGaN-based multi-quantum well LEDs in the 275-290 nm range. Recent progress in materials and device development has enabled output powers of > 1 mW at 290 nm
Keywords
aluminium compounds; gallium compounds; light emitting diodes; semiconductor quantum wells; ultraviolet sources; wide band gap semiconductors; 275 to 290 nm; AlGaN; AlGaN-based deep-UV LED; multiquantum well LED;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361824
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