DocumentCode
422359
Title
Pulsed terahertz emission from indium nitride thin films
Author
Ascazubi, R. ; Wilke, I. ; Denniston, K. ; Lu, H. ; Schaff, W.J.
Author_Institution
Dept. of Phys., Rensselaer Polytech. Inst., Troy, NY
Volume
1
fYear
2004
fDate
16-21 May 2004
Abstract
We report for the first time femtosecond optically excited terahertz pulse emission from indium nitride (InN). MBE-grown InN is a novel electronic material. The THz emission from InN is strong compared to previously investigated semiconductors
Keywords
high-speed optical techniques; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor thin films; submillimetre wave spectra; wide band gap semiconductors; InN; MBE; femtosecond optically excited terahertz pulse emission; indium nitride thin films;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics, 2004. (CLEO). Conference on
Conference_Location
San Francisco, CA
Print_ISBN
1-55752-777-6
Type
conf
Filename
1361861
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