DocumentCode :
422649
Title :
Spectrally controlled, picosecond pulse generation from an InGaN violet diode laser
Author :
Hu, Y. ; Khrushchev, I.
Author_Institution :
Dept. of Electron. Eng., Aston Univ., Birmingham, UK
Volume :
1
fYear :
2004
fDate :
7-11 Nov. 2004
Firstpage :
33
Abstract :
Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser in an external cavity.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; laser cavity resonators; optical pulse generation; quantum well lasers; spectral line narrowing; InGaN; InGaN laser; external cavity laser; gain-switched operation; multiquantum-well laser; narrow-line pulses; picosecond pulse generation; picosecond pulses; self-seeded operation; spectrally controlled pulse generation; uncoated diode laser; violet diode laser; wavelength-tunable pulses; Diffraction; Diode lasers; Laser feedback; Laser mode locking; Laser tuning; Optical control; Optical pulses; Power lasers; Pulse generation; Resonance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society, 2004. LEOS 2004. The 17th Annual Meeting of the IEEE
Print_ISBN :
0-7803-8557-8
Type :
conf
DOI :
10.1109/LEOS.2004.1363096
Filename :
1363096
Link To Document :
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