Design concept for 2800 V/2000 A GCT

Some new design concept for structure parameters of key regions of the reverse conducting gate commutated thyristor (GCT), such as n base region, n buffer layer, separation region and transparent anode region is presented in this paper. A reverse conducting GCT´s structure model is set up based on the design concept and its I-V characteristic, conducting characteristic and the reverse characteristic of gate-cathode junction are analyzed by using MEDICI simulator. The simulation results show the design concept is reasonable. Lastly, the cathode layout of the 2800 V/2000 A reverse conducting GCT is given based on this structure model.