A high performance 4H-SiC normally-off VJFET

Author

Zhao, J.H. ; Tone, K. ; Sheng, Kun ; Li, X. ; Alexandrov, P. ; Fursin, L. ; Weiner, M. ; Burke, T.

Author_Institution

ECE Dept., Rutgers Univ., Piscataway, NJ

Volume

1

fYear

2004

fDate

14-16 Aug. 2004

Firstpage

342

Abstract

This paper presents the design, fabrication and characterisation of a high performance 4H-SiC normally-off, trenched and implanted vertical junction field-effect transistor (VJFET). Devices with different trenched mesa widths were designed and their performance investigated. The fabricated VJFETs demonstrated a 3.9Omega resistance at V_G=5 V (with negligible gate current) and J_D=154 A/cm², corresponding to a low specific on-resistance of 3.7 mOmegacm² for a normally-off VJFET blocking voltage up to 1,734 V (at V_G=0 V). The specific on-resistance is more than 200 times smaller than that of the theoretical limit of Si FETs. The figure-of-merit (FOM, V_bt ²/R_ON-sp), is equal to 815 MW/cm² for the demonstrated VJFET, substantially surpassing the best FOM of any kind of unipolar and bipolar SiC power switches

Keywords

carbon compounds; electric resistance; junction gate field effect transistors; power semiconductor switches; semiconductor device packaging; silicon compounds; wide band gap semiconductors; 1734 V; 3.9 ohm; 5 V; Si FET; SiC; VJFET; bipolar SiC power switches; blocking voltage; device fabrication; silicon carbide; specific on-resistance; vertical junction field-effect transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Motion Control Conference, 2004. IPEMC 2004. The 4th International

Conference_Location

Xi´an

Print_ISBN

7-5605-1869-9

Type

conf

Filename

1377839