• DocumentCode
    426394
  • Title

    Silicon MIS-varactors with the double layer dielectric films from rare-earth oxides

  • Author

    Rozhkov, V.A. ; Rodionov, M.A. ; Pashin, A.V. ; Guriyanov, A.M.

  • Author_Institution
    Samara State Univ., Russia
  • fYear
    2004
  • fDate
    13-17 Sept. 2004
  • Firstpage
    566
  • Lastpage
    567
  • Abstract
    Electrical and physical properties of Al-Dy2O3-Gd2O3-Si MIS-structures have been investigated. Values of surface states density on the semiconductor-dielectric interface, values of surface generation velocity and the lifetime of minority charge carriers were determined.
  • Keywords
    MIS devices; aluminium; carrier lifetime; dielectric thin films; dysprosium compounds; gadolinium compounds; silicon; surface states; varactors; Al-Dy2O3-Gd2O3-Si; aluminium; double layer dielectric films; dysprosium oxide; electrical properties; gadolinium oxide; minority charge carrier lifetime; physical properties; rare-earth oxides; semiconductor-dielectric interface; silicon; silicon MIS-varactors; surface generation velocity; surface states density; Capacitance; Dielectric films; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
  • Print_ISBN
    966-7968-69-3
  • Type

    conf

  • DOI
    10.1109/CRMICO.2004.183337
  • Filename
    1390319
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=426394