Title :
Silicon MIS-varactors with the double layer dielectric films from rare-earth oxides
Author :
Rozhkov, V.A. ; Rodionov, M.A. ; Pashin, A.V. ; Guriyanov, A.M.
Author_Institution :
Samara State Univ., Russia
Abstract :
Electrical and physical properties of Al-Dy2O3-Gd2O3-Si MIS-structures have been investigated. Values of surface states density on the semiconductor-dielectric interface, values of surface generation velocity and the lifetime of minority charge carriers were determined.
Keywords :
MIS devices; aluminium; carrier lifetime; dielectric thin films; dysprosium compounds; gadolinium compounds; silicon; surface states; varactors; Al-Dy2O3-Gd2O3-Si; aluminium; double layer dielectric films; dysprosium oxide; electrical properties; gadolinium oxide; minority charge carrier lifetime; physical properties; rare-earth oxides; semiconductor-dielectric interface; silicon; silicon MIS-varactors; surface generation velocity; surface states density; Capacitance; Dielectric films; Silicon; Voltage;
Conference_Titel :
Microwave and Telecommunication Technology, 2004. CriMico 2004. 2004 14th International Crimean Conference on
Print_ISBN :
966-7968-69-3
DOI :
10.1109/CRMICO.2004.183337
