DocumentCode :
427262
Title :
A dual band SiGe quadrature VCO design for GSM/DCS-PCS applications
Author :
Cordeau, D. ; Paillot, J. ; De Astis, G. ; Dascalescu, L.
fYear :
2004
fDate :
11-12 Oct. 2004
Firstpage :
197
Lastpage :
200
Abstract :
A dual hand SiGe fully integrated quadrature Voltage Controlled Oscillator (VCO) for GSM/DCS-PCS applications is presented. This circuit is implemented in a 0.35μ BiCMOS SiGe process and is made of two cross-coupled differential VCOs, with integrated resonator, to ensure the quadrature outputs. At 2.7 V power supply voltage and a total power dissipation of 41.6 mW, the proposed VCO features a worst case phase noise of -8OdBuHz and -96dBr/Hz at IOW and 50kHz frequency offset respectively. Thanks to MOS capacitor switching, the VCO can be tuned over two frequency hands from 1.5 to 2 GHz with a tuning voltage varying from 0 to 2.7v.
Keywords :
Circuits; Design optimization; Dual band; Frequency; GSM; Germanium silicon alloys; Phase noise; Silicon germanium; Voltage; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless Technology, 2004. 7th European Conference on
Conference_Location :
Amsterdam, The Netherlands
Print_ISBN :
1-58053-991-2
Type :
conf
Filename :
1394804
Link To Document :
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