DocumentCode
42781
Title
All-Magnetic, Nonvolatile, Addressable Chainlink Memory
Author
Bromberg, David M. ; Morris, Daniel H. ; Pileggi, Larry ; Jian-Gang Zhu
Author_Institution
Dept. of Electr. & Comput. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA
Volume
49
Issue
7
fYear
2013
fDate
Jul-13
Firstpage
4394
Lastpage
4397
Abstract
MRAM has come into the spotlight as a potential candidate for universal memory. In this paper, we introduce chainlink, a concept for all-magnetic, nonvolatile memory. Two conductive paths form a chain through which data shifts. Each path is composed of short magnetic nanowires, or links, that store magnetization representing data bits. Data is moved along a link by spin-transfer torque and propagates to an adjacent, electrically-insulated link in the opposite path via magnetic coupling. Distinct phases of current pulses are applied to the paths to ensure the operation is fully digital and collision of data tokens is avoided. Multiple shift registers can be addressed with all magnetic elements; no transistors are required to access each bitcell. Micromagnetic and SPICE simulation of bit propagation and architecture elements demonstrate successful operation with 30 MA/cm2, 2 ns current pulses.
Keywords
MRAM devices; SPICE; nanowires; MRAM; SPICE simulation; addressable chainlink memory; all-magnetic memory; conductive paths; data bits; data shifts; data tokens; electrically-insulated link; magnetic coupling; magnetic elements; magnetic nanowires; micromagnetic simulation; nonvolatile memory; shift registers; spin-transfer torque; store magnetization; transistors; universal memory; Anisotropic magnetoresistance; Clocks; Couplings; Magnetic domain walls; Magnetic domains; Magnetization; Micromagnetics; Domain wall devices; magnetic memory; magnetoresistive random-access memory (MRAM);
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.2013.2239272
Filename
6559329
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