Title :
Detection of oxidized low density lipoproteins by indium oxide nanowires-based field effect transistor
Author :
Rouhanizadeh, Mahsa ; Tang, Tao ; Li, Chao ; DeMaio, Lucas ; Zhou, Chongwu ; Hsiai, Tzung
Author_Institution :
Dept. of Biomedical Eng. & Cardiovascular Medicine, Southern California Univ., Los Angeles, CA, USA
Abstract :
Oxidized low density lipoprotein (oxLDL) particles are known to initiate the development of coronary artery disease. Field effect transistors (FET) made of indium oxide (In2O3) nanowires have been demonstrated as sensitive chemical sensors for gaseous molecules such as NO2 and NH3. We hereby, apply In2O3 nanowires FETs to differentiate oxLDL from native LDL (nLDL), cytochrome-c and bovine serum albumin in terms of the transistor characteristic curves: ID-VDS (current versus drain-source voltage) and ID-VGS (current versus gate-source voltage). Measurements under static and flow conditions revealed that exposure of nanowires to these redox proteins selectively changed the FET conductivity and the gating effect of the transistors. To enhance the selectivity for oxLDL detection, surface chemistry modification with antioxLDL antibody was performed.
Keywords :
biological techniques; blood vessels; cardiovascular system; diseases; electrical conductivity; field effect transistors; indium compounds; molecular biophysics; nanowires; proteins; semiconductor materials; In/sub 2/O/sub 3/; antioxLDL antibody; bovine serum albumin; coronary artery disease; cytochrome-c; indium oxide nanowires-based field effect transistor; oxidized low density lipoproteins; sensitive chemical sensors; surface chemistry modification; Bovine; Chemical sensors; Conductivity measurement; Coronary arteriosclerosis; FETs; Fluid flow measurement; Indium; Nanowires; Proteins; Voltage measurement; Field Effect Transistor (FET); Indium Oxide (In; Low Density Lipoprotein (LDL);
Conference_Titel :
Engineering in Medicine and Biology Society, 2004. IEMBS '04. 26th Annual International Conference of the IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8439-3
DOI :
10.1109/IEMBS.2004.1403127