Integrated schottky mixer diodes with cut off frequencies above 1THz

In this paper we present firstly Schottky diodes, which are fully monolithical, integrated on a high resistivity silicon (FZ) substrate with cut-off frequencies above 1THz. The Schottky diodes have been manufactured successfully within an integration process. The integration process is a combination of two single processes, an Schottky-diode-process and a MEMS process. The very high cut off frequency was achieved even for very large area diodes using the MOTT operation mode. Therefore the vertical design, respectively the desigu of the epitaxial layers, have been improved.