DocumentCode
430286
Title
LDMOS RF power amplifiers with improved IMD performance
Author
Budimir, D. ; Koulouzis, H. ; Williams, C.
Volume
3
fYear
2004
fDate
12-14 Oct. 2004
Firstpage
1185
Lastpage
1188
Abstract
An LDMOS RF power amplifier for RF multichannel wireless systems with improved performance characteristics such as intermodulation distortion (IMD) is presented. The injeclion of the fundamental signal second harmonics in the amplifier together with the two fundamental signals will produce additional IM products at the output. By proper selection of phase and amplitude of the injected second harmonic signals, it is possible to make the third order IM products produced by the second harmonics and the original third order IM products out of phase and equal in amplitude.
Keywords
Communication channels; Gallium arsenide; Intermodulation distortion; Linearity; MESFETs; Power amplifiers; Power harmonic filters; Quadrature phase shift keying; Radio frequency; Radiofrequency amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2004. 34th European
Conference_Location
Amsterdam, The Netherlands
Print_ISBN
1-58053-992-0
Type
conf
Filename
1411217
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