• DocumentCode
    430286
  • Title

    LDMOS RF power amplifiers with improved IMD performance

  • Author

    Budimir, D. ; Koulouzis, H. ; Williams, C.

  • Volume
    3
  • fYear
    2004
  • fDate
    12-14 Oct. 2004
  • Firstpage
    1185
  • Lastpage
    1188
  • Abstract
    An LDMOS RF power amplifier for RF multichannel wireless systems with improved performance characteristics such as intermodulation distortion (IMD) is presented. The injeclion of the fundamental signal second harmonics in the amplifier together with the two fundamental signals will produce additional IM products at the output. By proper selection of phase and amplitude of the injected second harmonic signals, it is possible to make the third order IM products produced by the second harmonics and the original third order IM products out of phase and equal in amplitude.
  • Keywords
    Communication channels; Gallium arsenide; Intermodulation distortion; Linearity; MESFETs; Power amplifiers; Power harmonic filters; Quadrature phase shift keying; Radio frequency; Radiofrequency amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2004. 34th European
  • Conference_Location
    Amsterdam, The Netherlands
  • Print_ISBN
    1-58053-992-0
  • Type

    conf

  • Filename
    1411217