DocumentCode
430503
Title
A millimeter-wave linear low noise amplifier in sige HBT technology with substrate parasitic model
Author
Raghavan, Arun ; Jalan, U. ; Chakraborty, S. ; Chang-Ho Le ; Laskar, J. ; Chen, E. ; JongSoo Lee ; Cressler, J.D. ; Freeman, G. ; Joseph, A.
Volume
1
fYear
2004
fDate
12-14 Oct. 2004
Firstpage
21
Lastpage
24
Abstract
This paper outlines the design and implementation of a monolithic millimeter-wave low noise amplifier (LNA) fabricated in a 200 GHz SiGe HBT technology. A simple analytical model of electromagnetic and substrate parasitic effects inherent at millimeter-wave frequencies is also included. A measured gain of 13.3 dB at 45 GHz, with an associated 3 dB bandwidth of 6.7 GHz, is exhibited by the LNA, along with a noise figure of 4.5 dB. The LNA provides linear performance with an IIP, of -8 dBm and it dissipates 18 mW.
Keywords
Circuit synthesis; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Millimeter wave measurements; Millimeter wave technology; Silicon germanium; Space technology; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2004. 34th European
Conference_Location
Amsterdam, The Netherlands
Print_ISBN
1-58053-992-0
Type
conf
Filename
1412505
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