DocumentCode
430508
Title
Measured attenuation of coplanar waveguide on 6H, p-type SiC and high purity semi-insulating 4H SiC through 800 K
Author
Ponchak, G.E. ; Schwartz, Z.D. ; Alterovitz, S.A. ; Downey, A.N.
Volume
1
fYear
2004
fDate
12-14 Oct. 2004
Firstpage
41
Lastpage
44
Abstract
Wireless sensors for high temperature applications such as oil drilling and mining, automobiles, and jet engine performance monitoring require circuits built on wide bandgap semiconductors. In this paper, the characteristics of microwave transmission lines on 4H-High Purity Semi-Insulating Sic and 6H, p-type Sic is presented as a function of temperature and frequency. It is shown that the attenuation of 6H, p-type substrates is too high for microwave circuits, large leakage current will flow through the substrate, and that unusual attenuation characteristics are due to trapping in the SIC. The 4H-HPSI Sic is shown to have low attenuation and leakage currents over the entire temperature range.
Keywords
Attenuation measurement; Calibration; Coplanar waveguides; Leakage current; Power transmission lines; Silicon carbide; Substrates; Temperature distribution; Temperature sensors; Wide band gap semiconductors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2004. 34th European
Conference_Location
Amsterdam, The Netherlands
Print_ISBN
1-58053-992-0
Type
conf
Filename
1412511
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