Measurement of thin film integrated passive devices on SiC tbrough 5000/sup /spl deg//C

Wireless communication in jet engines and high temperature industrial applications requires RF integrated circuits (RFICs) on wide bandgap semiconductors such as silicon carbide (Sic). In this paper, thin-film NiCr resistors, MIM capacitors, and spiral inductors are fabricated on a high purity semi-insulating 4H-Sic substrate. The devices are experimentally characterized through 50 GHz at temperatures up to 50O°C and the equivalent circuits are deembedded from the measured data. It is shown that the NiCr resistors are stable within 10% to 300°C while the capacitors have a value stable within 10% through 500°C.