DocumentCode
430582
Title
A InGaP/GaAs HBT WLAN power amplifier with power detector
Author
Kyung Ai Lee ; Dong Ho Lee ; Hyun-Min Park ; Sang-Hoon Cheon ; Jae-Woo Park ; Hyung-mo Yoo ; Songcheol Hong
Volume
1
fYear
2004
fDate
12-14 Oct. 2004
Firstpage
345
Lastpage
347
Abstract
A two-stage InCaPEaAs heterojunction bipolar transistor (HBT) power amplifier is developed for WLAN 802.11b application. This is integrated with power detector that senses input power of power stage in order to decrease ontput power loss of detecting. The power amplifier delivers up to 26dBm output power with the maximum power-added efficiency (PAE) of 31% including consumption of the power detector uuder the supply voltage of 3.3%´
Keywords
Detectors; Electronic ballasts; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; Power amplifiers; Power generation; Power transistors; Radiofrequency amplifiers; Wireless LAN;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2004. 34th European
Conference_Location
Amsterdam, The Netherlands
Print_ISBN
1-58053-992-0
Type
conf
Filename
1412592
Link To Document