Title :
3D electro-thermal modeling of ggNMOS ESD protection structure
Author :
Xie, Haolu ; Zhan, Rouying ; Wang, Albert ; Gafiteanu, R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
Abstract :
This work presents a simple-to-implement, 3D electro-thermal model for circuit-level SPICE simulation of grounded-gate NMOS (ggNMOS), with application for ESD (electrostatic discharge) protection circuit design verification. A new ESD discharging fitting resistor (Ron) is employed to improve ESD electrical modeling in the high-current region and a new 3D thermal resistor parameter (Rth) is proposed to model the electro-thermal characteristics of ggNMOS. The extraction method for the new parameters, Ron and Rth, is discussed. Finally, simulation results are presented and compared with experimental data.
Keywords :
MOS integrated circuits; SPICE; circuit simulation; electrostatic discharge; integrated circuit design; integrated circuit modelling; 3D electro-thermal modeling; 3D thermal resistor parameter; ESD electrical modeling; ESD protection circuit design; SPICE simulation; electrostatic discharge; extraction method; grounded-gate NMOS; Breakdown voltage; Circuit simulation; Circuit synthesis; Electric breakdown; Electrostatic discharge; MOS devices; Protection; Resistors; SPICE; Thermal resistance;
Conference_Titel :
Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on
Print_ISBN :
0-7803-8660-4
DOI :
10.1109/APCCAS.2004.1412691
