A 3.5GHz 2W MMIC power amplifier using AlGaAs/InGaAs/GaAs PHEMTs

Author

Chu, Chen-Kuo ; Huang, Hou-Kuei ; Liu, Hong-Zhi ; Chiu, Ray-Jay ; Lin, Che-Hung ; Wang, Chih-Cheng ; Wang, Yeong-Her ; Hsu, Chuan-Chien ; Wu, Wang ; Wu, Chang-Luen ; Chang, Chian-Sem

Author_Institution

Inst. of Microelectron., Nat. Cheng-Kung Univ., Tainan, Taiwan

Volume

1

fYear

2004

fDate

6-9 Dec. 2004

Firstpage

101

Abstract

A 3.3-3.8GHz 2W MMIC power amplifier using AlGaAs/InGaAs/GaAs PHEMT for wireless local-area network and multi-channel multipoint distribution service applications is demonstrated. This two-stage amplifier is designed to match fully a 50Ω input and output impedance. With dual-bias configuration, the amplifier possesses a 30.4dB small-signal gain, and a 34dBm 1-dB gain compression power with 37.1% power-added efficiency. Moreover, high linearity with a 41.5dBm third-order intercept point at a frequency of 3.5GHz is obtained.

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium arsenide; indium compounds; integrated circuit design; wireless LAN; 2 W; 3.3 to 3.8 GHz; 30.4 dB; 50 ohms; AlGaAs-InGaAs-GaAs; MMIC power amplifier; PHEMT; multichannel distribution service; multipoint distribution service; two-stage amplifier; wireless local area network; Distributed amplifiers; Frequency; Gallium arsenide; Impedance; Indium gallium arsenide; Linearity; Local area networks; MMICs; PHEMTs; Power amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on

Print_ISBN

0-7803-8660-4

Type

conf

DOI

10.1109/APCCAS.2004.1412701

Filename

1412701