Title :
A 1V 2.4GHz CMOS power amplifier with integrated diode linearizer
Author :
Lin, Kun-E ; Weng, Ro-Min ; Hsiao, Chih-Lung ; Wei, Hung-Che
Author_Institution :
Dept. of Electr. Eng., Nat. Dong Hwa Univ., Hualien, Taiwan
Abstract :
A low voltage CMOS power amplifier with integrated diode linearization technique is proposed. It is designed for 2.4 GHz Bluetooth applications. The power amplifier is simulated with UMC 0.18μm CMOS technology. Under 1V supply voltage, PA can deliver 20 dBm output power with 51% power-added-efficiency. At 2.4 GHz, the reverse isolation coefficient S12 is -27.5 dB.
Keywords :
Bluetooth; CMOS integrated circuits; UHF integrated circuits; UHF power amplifiers; integrated circuit design; low-power electronics; power semiconductor diodes; 0.18 micron; 1 V; 2.4 GHz; Bluetooth; CMOS power amplifier; CMOS technology; integrated diode linearizer; Bluetooth; CMOS technology; Diodes; Impedance matching; Isolation technology; MOSFETs; Power amplifiers; Radio frequency; Radio transmitters; Radiofrequency amplifiers;
Conference_Titel :
Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on
Print_ISBN :
0-7803-8660-4
DOI :
10.1109/APCCAS.2004.1412703
