Laser/modulator driver with high modulation output operating up to 14-Gb/s using 0.35μm SiGe BiCMOS process

Author

Li, Day-Uei ; Tsai, Chiailding ; Huang, Li-Ren

Author_Institution

SoC Technol. Center, Ind. Technol. Res. Inst., Hsinchu, Taiwan

Volume

1

fYear

2004

fDate

6-9 Dec. 2004

Firstpage

225

Abstract

A laser driver capable of driving over 100 mA modulation current fabricated in 0.35μm SiGe BiCMOS process was presented in this work. Measurements on mounted chips show clear electrical eye diagrams over 14-Gb/s data rate with a typical (20% to 80%) 24 ps rise time, 26 ps (20% to 80%) fall time, and a jitter (RMS) less than 2 ps. Moreover, optical eye diagram is also demonstrated by connecting the driver with a commercial 10-Gb/s 1310-nm laser diode and it stays well within the 10-Gb/s Ethernet transmitter mask.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; driver circuits; integrated optoelectronics; optical communication equipment; optical modulation; semiconductor lasers; 0.35 micron; 10 Gbit/s; 1310 nm; 14 Gbit/s; BiCMOS process; SiGe; electrical eye diagram; high modulation output; laser diode; laser driver; modulation current; modulator driver; optical eye diagram; BiCMOS integrated circuits; Electric variables measurement; Germanium silicon alloys; Jitter; Joining processes; Optical transmitters; Semiconductor device measurement; Signal analysis; Silicon germanium; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2004. Proceedings. The 2004 IEEE Asia-Pacific Conference on

Print_ISBN

0-7803-8660-4

Type

conf

DOI

10.1109/APCCAS.2004.1412733

Filename

1412733