A 700- V Junction-Isolated Triple RESURF LDMOS With N-Type Top Layer

Author

Ming Qiao ; Yanfei Li ; Xin Zhou ; Zhaoji Li ; Bo Zhang

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

35

Issue

7

fYear

2014

fDate

Jul-14

Firstpage

774

Lastpage

776

Abstract

A junction-isolated triple RESURF (JITR) LDMOS with high breakdown voltage (BV) and low specific on-resistance (R_on,sp) is proposed in this letter. Compared with the conventional triple RESURF (CTR) LDMOS, the new structure features a highly doped n-type top (N-top) layer at the surface of N-well, providing a low on-resistance surface conduction path in the on-state. The experimental result demonstrates that low R_on,sp and high BV of above 730 V are achieved by the JITR LDMOS. R_on,sp of the JITR LDMOS is about 15%-24.3% lower than that of the CTR LDMOS. The JITR LDMOS with horizontal N-top layer and P-buried layer resembles a super junction (SJ) LDMOS. Compared with the reported SJ LDMOS, the SJ layer of JITR LDMOS is formed in the longitudinal direction instead of the width direction, and the proposed JITR LDMOS exhibits almost the highest BV and high power figure of merit (FOM, defined as BV²/R_on,sp) in comparison to the published SJ LDMOS.

Keywords

MOSFET; electric breakdown; semiconductor junctions; CTR LDMOS; FOM; JITR LDMOS; N-top layer; P-buried layer; SJ LDMOS; SJ layer; breakdown voltage; conventional triple RESURF LDMOS; figure of merit; junction-isolated triple RESURF LDMOS; n-type top layer; on-resistance surface conduction path; specific on-resistance; super junction LDMOS; voltage 700 V; Current measurement; Doping; Electric breakdown; Junctions; Power supplies; Substrates; Voltage measurement; Breakdown voltage (BV); Junction-isolated triple RESURF (JITR) LDMOS; breakdown voltage (BV); n-type top (N-top) layer; specific on-resistance ( (R_{{rm on},{rm sp}}) ); specific on-resistance (Ron).;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2014.2326185

Filename

6827916