• DocumentCode
    432041
  • Title

    Photoluminescence polarization decay under longitudinal electric field in strained Si1-xGex/Si quantum wells

  • Author

    Yasuhara, N. ; Fukatsu, S.

  • Author_Institution
    Graduate Sch. of Arts & Sci., Tokyo Univ., Japan
  • fYear
    2004
  • fDate
    29 Sept.-1 Oct. 2004
  • Firstpage
    118
  • Lastpage
    120
  • Abstract
    Non-linear decay of photoluminescence polarization was observed in strained Si1-xGex/Si quantum wells under longitudinal electric field at low temperature, which is interpreted in terms of delayed field ionization of excitons.
  • Keywords
    excitons; field ionisation; internal stresses; optical materials; photoluminescence; semiconductor quantum wells; silicon compounds; Si1-xGex-Si; exciton delayed field ionization; photoluminescence polarization decay; strained Si1-xGex/Si quantum wells; Art; Delay; Electrodes; Electroluminescent devices; Excitons; Ionization; Luminescence; Optical polarization; Photoluminescence; Temperature dependence;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Group IV Photonics, 2004. First IEEE International Conference on
  • Print_ISBN
    0-7803-8474-1
  • Type

    conf

  • DOI
    10.1109/GROUP4.2004.1416686
  • Filename
    1416686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=432041