• DocumentCode
    432085
  • Title

    Growth of AlN film on Mo/SiO2/Si (111) for 5 GHz-band FBAR using MOCVD

  • Author

    Yang, C.-M. ; Uehara, K. ; Aota, Y. ; Kim, S.-K. ; Kameda, S. ; Nakase, H. ; Isota, Y. ; Tsubouchi, K.

  • Author_Institution
    Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
  • Volume
    1
  • fYear
    2004
  • fDate
    23-27 Aug. 2004
  • Firstpage
    165
  • Abstract
    We fabricated a film-bulk-acoustic resonator with high c-axis oriented AlN film on Mo/SiO2/Si (100) using metalorganic chemical vapor deposition. The resonant frequency and anti-resonant frequency of the fabricated resonator were 3.189 GHz and 3.224 GHz, respectively. The quality factor and the effective electromechanical coupling coefficient were 24.7 and 2.65%, respectively. The conditions of AlN deposition were substrate temperature of 950°C, pressure of 20 torr, and V-III ratio of 25000. We have successfully grown high c-axis oriented AlN film with 4×10-5 Ωcm resistivity of the Mo bottom electrode. The full width at half maximum (FWHM) of the AlN (0002) on Mo/SiO2/Si (100) and Mo/SiO2/Si (111) were 4° and 3.8°, respectively. The FWHM values of the deposited AlN film satisfy the RF band pass filter specification for GHz-band wireless local area network.
  • Keywords
    III-V semiconductors; IV-VI semiconductors; MOCVD; Q-factor; acoustic resonator filters; aluminium compounds; band-pass filters; electrical resistivity; elemental semiconductors; microwave filters; molybdenum; pressure; semiconductor thin films; silicon; silicon compounds; temperature; 20 torr; 3.189 GHz; 3.224 GHz; 4E-5 ohmcm; 5 GHz; 950 C; AlN; MOCVD; Mo-SiO2-Si; RF band pass filter; aluminium nitride film; antiresonant frequency; c-axis oriented film; film-bulk-acoustic resonator; metalorganic chemical vapor deposition; molybdenum; quality factor; resonant frequency; silica; silicon oxide; wireless local area network; Band pass filters; Chemical vapor deposition; Conductivity; Electrodes; Q factor; Radio frequency; Resonant frequency; Semiconductor films; Substrates; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ultrasonics Symposium, 2004 IEEE
  • ISSN
    1051-0117
  • Print_ISBN
    0-7803-8412-1
  • Type

    conf

  • DOI
    10.1109/ULTSYM.2004.1417694
  • Filename
    1417694
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=432085