DocumentCode :
432341
Title :
Fabrication of sol-gel modified piezoelectric thick films for high frequency ultrasonic applications
Author :
Zhou, Q.F. ; Shung, K.K. ; Huang, Y.
Author_Institution :
Dept. of Biomed. Eng., Univ. of Southern California, Los Angeles, CA, USA
Volume :
3
fYear :
2004
fDate :
23-27 Aug. 2004
Firstpage :
1958
Abstract :
In this work, a fabrication process of piezoelectric PZT thick films up to 60 μm deposited on silicon and aluminum substrates is reported. Crystalline spherical modified PZT powder about 0.3 μm in diameter was used as filler. PZT polymeric precursor produced by Chemat Incorporated was used as the matrix material. Spinning films were annealed at 700°C in the furnace for half an hour in air. The thickness of the thick films: was measured using a scanning electron microscope (SEM). Compared with previous piezoelectric PZT composite films, the modified piezoelectric thick films exhibit very good dielectric properties. The dielectric constant is over 780 and dielectric loss is 0.04 at 1 kHz. Using a PiezoCAD model, the high frequency transducer was designed and fabricated. It showed a bandwidth of 75% at 40 MHz.
Keywords :
aluminium; piezoelectric transducers; silicon; sol-gel processing; thick films; ultrasonic transducers; 1 kHz; 40 MHz; 700 degC; PZT polymeric precursor; PiezoCAD model; SEM; aluminum substrates; crystalline spherical modified PZT powder; fabrication; high frequency transducer; high frequency ultrasonic applications; piezoelectric PZT thick films; scanning electron microscope; silicon substrates; sol-gel modified piezoelectric thick films; spinning film annealing; Acoustic applications; Aluminum; Crystallization; Dielectric losses; Fabrication; Frequency; Piezoelectric films; Scanning electron microscopy; Silicon; Thick films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2004 IEEE
ISSN :
1051-0117
Print_ISBN :
0-7803-8412-1
Type :
conf
DOI :
10.1109/ULTSYM.2004.1418216
Filename :
1418216
Link To Document :
بازگشت