DocumentCode
433250
Title
High power HBV multipliers for F- and G-band applications
Author
Emadi, T.A. ; Vukusic, J. ; Ingvarson, M. ; Olsen, A.O. ; Bryllert, T. ; Kollberg, E. ; Stake, Jan
Author_Institution
Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden
fYear
2004
fDate
27 Sept.-1 Oct. 2004
Firstpage
319
Lastpage
320
Abstract
Progress and realisation of applications in the 100-240 GHz region is inhibited by the lack of high-power sources. Therefore, in an effort to reach watts of output power, we have tailored devices, circuits, materials, and design and fabrication methods for improved thermal management and high overall conversion efficiencies.
Keywords
III-V semiconductors; frequency multipliers; gallium arsenide; indium compounds; semiconductor epitaxial layers; varactors; 100 to 240 GHz; F-band applications; G-band applications; InGaAs; InP; heterostructure barrier varactor diode multipliers; tailored circuits; tailored devices; tailored materials; thermal management; Circuits; Fingers; Frequency; Geometry; Indium gallium arsenide; Power generation; Schottky diodes; Temperature; Thermal management; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN
0-7803-8490-3
Type
conf
DOI
10.1109/ICIMW.2004.1422085
Filename
1422085
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