Sub-terahertz response of stressed and unstressed Ge:Ga photoconductive detectors

Author

Hubers, Heinz-Wilhelm ; Pavlov, S.G. ; Holldack, K. ; Kuske, P. ; Schade, U. ; Wustefeld, G.

Author_Institution

German Aerosp. Center, Berlin, Germany

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

339

Lastpage

340

Abstract

Ge:Ga is a widely used detector material for applications at terahertz frequencies. Its response ranges from about 40 μm -120 μm. If a compressive force is applied to the crystal the response shifts to about 100 μm - 240 μm. We report on a long wavelength, sub-terahertz response >300 μm. This response can be attributed to transitions from excited Ga states into the valence band. The results indicate that a cascade type of relaxation exists in Ge:Ga at 4.5 K.

Keywords

elemental semiconductors; gallium; germanium; infrared detectors; photoconducting devices; photoconducting materials; photodetectors; submillimetre wave detectors; valence bands; 100 to 240 micron; 4.5 K; 40 to 120 micron; Ga doped Ge detector; Ge:Ga; cascade relaxation; compressive force; excited Ga states; gallium doped germanium detector; spectral line shift; subterahertz detector; subterahertz frequency response; unstressed photoconductive detectors; valence band; Aerospace materials; Astronomy; Detectors; Frequency; Gallium; Germanium; Iris; Observatories; Photoconductivity; Stationary state;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1422097

Filename

1422097