DocumentCode :
433264
Title :
Multiple donor impurities of interstitial magnesium in silicon
Author :
Ho, L.T.
Author_Institution :
Inst. of Phys., Academia Sinica, Taipei, Taiwan
fYear :
2004
fDate :
27 Sept.-1 Oct. 2004
Firstpage :
417
Lastpage :
418
Abstract :
It is well known that magnesium, when diffused into silicon, behaves as a double donor. Recently, we have further observed several additional spectral lines from high-resolution FTIR absorption spectrum, which clearly indicates the existence of more donor centers, all in the interstitial position, for magnesium in silicon.
Keywords :
Fourier transform spectra; elemental semiconductors; impurity absorption spectra; impurity states; infrared spectra; interstitials; magnesium; silicon; Si:Mg; donor centers; double donor; high resolution FTIR absorption spectrum; interstitial magnesium; multiple donor impurities; silicon; spectral lines; Electromagnetic wave absorption; Impurities; Infrared spectra; Ionization; Magnesium; Physics; Silicon; Spectroscopy; Stationary state; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
Type :
conf
DOI :
10.1109/ICIMW.2004.1422139
Filename :
1422139
Link To Document :
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