A new THz-photomixer based on a n-i-p-n doping superlattice

Author

Loata, G. ; Löffler, T. ; Roskos, H.G. ; Renner, F.H. ; Klar, O. ; Eckardt, M. ; Schwanhäußer, A. ; Döhler, G.H. ; Driscoll, D. ; Hansen, M. ; Gossard, A.C. ; Krozer, V.

Author_Institution

Physikalisches Inst., J.W. Goethe Univ., Main, Germany

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

459

Lastpage

460

Abstract

We investigate a THz-photomixer based on quasi-ballistic transport in an asymmetric n-i-p-n superlattice. The measured frequency roll-off is due to the device RC time constant alone whilst the transit-time limitation is overcome in this device. Measured power levels compare well with those from standard LT-GaAs photomixers.

Keywords

III-V semiconductors; ballistic transport; gallium arsenide; p-i-n photodiodes; semiconductor superlattices; submillimetre wave mixers; transit time devices; GaAs; LT-GaAs photomixers; THz-photomixer; asymmetric n-i-p-n superlattice; device RC time constant; frequency roll-off; quasiballistic transport; transit time limitation; Capacitance; Charge carrier processes; Doping; Electrons; Frequency measurement; Optical scattering; P-i-n diodes; Power measurement; Spontaneous emission; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1422162

Filename

1422162