Simulation and optimization of arsenic-implanted THz emitters

Author

Johnston, M.B. ; Lloyd-Hughes, J. ; Casto-Camus, E. ; Fraser, M.D. ; Jagadish, C.

Author_Institution

Clarendon Lab., Oxford Univ., UK

fYear

2004

fDate

27 Sept.-1 Oct. 2004

Firstpage

577

Lastpage

578

Abstract

We have used a three-dimensional pseudo-classical Monte Carlo simulation to investigate the effects of As⁺ ion-implantation on pulsed terahertz radiation emitters. Devices based on surface-field emitters and photoconductive switches have been modelled. Two implantations of As⁺ ions at 1.0 MeV and 2.4 MeV were found to produce a uniform distribution of vacancies over the volume of GaAs contributing to THz generation in these devices. We calculate that ion-implantation increases the THz bandwidth of the devices with the cost of decreasing the spectral intensity at lower THz frequencies.

Keywords

III-V semiconductors; Monte Carlo methods; gallium arsenide; ion implantation; photoconducting switches; point defect scattering; semiconductor device models; semiconductor doping; submillimetre wave devices; submillimetre wave generation; vacancies (crystal); 1.0 MeV; 2.4 MeV; As⁺ ion-implantation; GaAs; THz generation; arsenic-implanted THz emitters; optimization; photoconductive switches; pseudoclassical Monte Carlo simulation; pulsed terahertz radiation emitters; spectral intensity; surface-field emitters; three-dimensional simulation; vacancy uniform distribution; Frequency; Gallium arsenide; Optical pulses; Optical scattering; Photoconducting devices; Photoconductivity; Spectroscopy; Surface emitting lasers; Switches; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on

Print_ISBN

0-7803-8490-3

Type

conf

DOI

10.1109/ICIMW.2004.1422222

Filename

1422222