• DocumentCode
    433353
  • Title

    High conversion gain millimeter-wave optoelectronic mixer based on InAlAs/InGaAs metamorphic HEMT

  • Author

    Kang, Hyo-Soon ; Choi, Chang-Soon ; Choi, Woo-Young ; Kim, Dae-Hyun ; Seo, Kwang-Seok

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Yonsei Univ., Seoul, South Korea
  • fYear
    2003
  • fDate
    10-12 Sept. 2003
  • Firstpage
    105
  • Lastpage
    108
  • Abstract
    We experimentally investigate the InAlAs/InGaAs metamorphic HEMT (m-HEMT) on GaAs substrate as a millimeter-wave optoelectronic mixer. The maximum internal conversion gain of 18.17 dB is obtained with 0 dBm local oscillator (LO) power. The m-HEMT exhibits a wide LO frequency range which is well extended to the millimeter-wave band. We also measured the spurious free dynamic range of the m-HEMT as an optoelectronic mixer, whose value is about 96 dBHz23/.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave photonics; millimetre wave mixers; GaAs; InAlAs-InGaAs; InAlAs/InGaAs HEMT; high conversion gain; metamorphic HEMT; millimeter-wave mixer; optoelectronic mixer; Dynamic range; Frequency; Gain; Gallium arsenide; Indium compounds; Indium gallium arsenide; Local oscillators; Millimeter wave measurements; Mixers; mHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Photonics, 2003. MWP 2003 Proceedings. International Topical Meeting on
  • Print_ISBN
    0-7803-8691-4
  • Type

    conf

  • DOI
    10.1109/MWP.2003.1422838
  • Filename
    1422838
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=433353