DocumentCode
434084
Title
Finite-element model of the tensoresistor
Author
Kolchuzhin, V.A.
fYear
2004
fDate
21-24 Sept. 2004
Firstpage
214
Lastpage
214
Abstract
Classifications of integrated tensoresistor models are presented, These models are including: anisotropy of conductivity; influence of tensoresistor geometry and contact areas; non-Uniform distribution of mechanical stress and concentration of doping impurity on tensoresistor volume. The finite-elernent model integrated tensoresistor which allows taking into account in consecutive these effects is submitted. The received model can be used for calculation and optimization multiterminal strain-sensing element with complex layout.
Keywords
Anisotropic magnetoresistance; Conductivity; Doping; Finite element methods; Geometry; Impurities; Interference; Semiconductor process modeling; Solid modeling; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Instrument Engineering Proceedings, 2004. APEIE 2004. 2004 7th International Conference on Actual Problems of
Conference_Location
Novosibirsk, Russia
Print_ISBN
0-7803-8476-8
Type
conf
Filename
1427222
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