• DocumentCode
    434084
  • Title

    Finite-element model of the tensoresistor

  • Author

    Kolchuzhin, V.A.

  • fYear
    2004
  • fDate
    21-24 Sept. 2004
  • Firstpage
    214
  • Lastpage
    214
  • Abstract
    Classifications of integrated tensoresistor models are presented, These models are including: anisotropy of conductivity; influence of tensoresistor geometry and contact areas; non-Uniform distribution of mechanical stress and concentration of doping impurity on tensoresistor volume. The finite-elernent model integrated tensoresistor which allows taking into account in consecutive these effects is submitted. The received model can be used for calculation and optimization multiterminal strain-sensing element with complex layout.
  • Keywords
    Anisotropic magnetoresistance; Conductivity; Doping; Finite element methods; Geometry; Impurities; Interference; Semiconductor process modeling; Solid modeling; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Instrument Engineering Proceedings, 2004. APEIE 2004. 2004 7th International Conference on Actual Problems of
  • Conference_Location
    Novosibirsk, Russia
  • Print_ISBN
    0-7803-8476-8
  • Type

    conf

  • Filename
    1427222