A γ effect on the power MOSFET

Author

Lho, Young Hwan ; Kim, Ki Yup

Author_Institution

Dept. of Digital & Commun., Woosong Univ., Daejon, South Korea

Volume

1

fYear

2004

fDate

2-6 Nov. 2004

Firstpage

719

Abstract

The electrical characteristics of solid state devices such as BJT (bipolar junction transistor) and MOSFET, etc. are altered by impinging photon radiation and temperature in the space environment In this paper, the threshold voltage, the breakdown voltage, and the on-resistance for the two kinds of MOSFET´s (200 V and 100 V of V_DSS) are tested to γ-irradiation and compared with the specifications under the pre and post irradiation of low dose rates of 4.97 and 9.55 rad/sec, and maximum total dose of 30 Krad. In our experiment, the γ radiation facility with low dose available at KAERI (Korea Atomic Energy Research Institute) has been applied on two commercially available IR (International Rectifier) products of IRFP250 and IRF540.

Keywords

gamma-ray effects; power MOSFET; radiation hardening (electronics); semiconductor device breakdown; γ-irradiation; BJT; IRF540; IRFP250; KAERI; Korea Atomic Energy Research Institute; bipolar junction transistor; breakdown voltage; dose rate; electrical characteristics; impinging photon radiation; international rectifier; power MOSFET; pre-post irradiation; radiation effects; solid state devices; threshold voltage; total dose; Atomic measurements; Decision support systems; Electric variables; MOSFET circuits; Power MOSFET; Rectifiers; Solid state circuits; Temperature; Testing; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industrial Electronics Society, 2004. IECON 2004. 30th Annual Conference of IEEE

Print_ISBN

0-7803-8730-9

Type

conf

DOI

10.1109/IECON.2004.1433400

Filename

1433400