Modeling and parameters extraction of spiral inductors for silicon-based RFICs

In this paper, we developed a new wide-band spiral inductor model that uses a transformer loop to model the substrate loss at high frequencies related to substrate eddy current loss. The model accurately predicts the skin effect and proximity effect of spiral inductor over a wide-frequency range using a ladder ´4-element´ structure and a power resistor. Since it has frequency-independent elements, the proposed model can be integrated in SPICE-compatible simulators. The proposed model has been verified with measured results of spiral inductor fabricated in a 0.35-μm 2P4M CMOS process. The proposed model shows excellent agreement with measured data over a wide-band frequency range.