• DocumentCode
    435733
  • Title

    SOI CMOS: smaller-size devices, larger-size future

  • Author

    Cristoloveanu, Sorin

  • Author_Institution
    Inst. of Microelectron. Electromagnetism & Photonics, ENSERG, Grenoble, France
  • Volume
    1
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    262
  • Abstract
    Recent measurements and simulation data are presented in order to demonstrate the impact of the miniaturization of SOI MOSFETs. We discuss the role of each critical dimension of the transistor: channel length/width and thickness of silicon film, buried oxide and gate oxide.
  • Keywords
    CMOS integrated circuits; MOSFET; nanotechnology; silicon-on-insulator; SOI CMOS; SOI MOSFET; buried oxide; channel length; channel width; gate oxide; silicon film; transistor critical dimension; CMOS technology; Degradation; Dielectric thin films; Electromagnetic measurements; MOSFETs; Photonics; Positron emission tomography; Semiconductor films; Silicon on insulator technology; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1435001
  • Filename
    1435001
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=435733