• DocumentCode
    435759
  • Title

    Reaction of interfacial layer and trapping in HfO2 gated MOS structures

  • Author

    Liu, Yanxiang ; Wang, X.W. ; Ma, T.P. ; Lee, Lurng-Shehng ; Tsai, Ming-Jinn ; Chou, Yu-Wei

  • Author_Institution
    Yale Univ., New Haven, CT, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    399
  • Abstract
    This paper presents experimental evidence of severe chemical reactions between physical-vapor-deposited (PVD) HfO2 and the underlying SiO2 interfacial layer, resulting in undesired trapping problems. In contrast, it will also show that HfO2 does not react with SiN. Correspondingly, MOS capacitors made with HfO2/SiN as the dielectric stack exhibit no trapping related problems at all. It should be noted that, the term SiN in this paper actually means SiON where the oxygen is unintentionally incorporated.
  • Keywords
    MIS structures; MOS capacitors; hafnium compounds; interface states; silicon compounds; vapour deposition; HfO2-SiN; MOS capacitors; MOS structures; SiN; SiO2; SiON; chemical reactions; dielectric stack; interfacial layer; physical vapor deposition; trapping problems; Atherosclerosis; Computed tomography; Dielectrics; Electron traps; Hafnium oxide; MOSFETs; Silicon compounds; Stress; Temperature measurement; Tiles;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1435034
  • Filename
    1435034
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=435759