Title :
The characteristics of Ni (Pt) Si/Si Schottky barrier diode with deep trench
Author :
Li-Chun, Zhang ; Hai-Yan, Jin ; Yu-Zhi, Gao ; Hui, Zhang ; Wei, Huang ; Jian-Zheng, Lu
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
In this paper, Ni(Pt)Si film is formed using the structure Ni/Pt/Ni/Si after the RTA, and the sheet resistance of Ni(Pt)Si film is rather low during 600-850°C. The transformation temperature from low resistance phase to high resistance phase is 150°C higher than that of NiSi film. Ni(Pt)Si/Si Schottky barrier diode, which goes through 850°C RTA, has good I-V characteristics. The corresponding Schottky barrier height ΦB of 0.71eV is obtained. We think that the film of Ni(Pt)Si has better stability than NiSi. The experiment shows that the deep trench to replace guard ring in Schottky diode can greatly increase the reverse breakdown voltage of the device. When the impurity concentration in epitaxial substrate is 5e15cm-3 the breakdown voltage of device with deep trench is up to 80 V, while device with guard rings is only 50V.
Keywords :
Schottky barriers; Schottky diodes; ion implantation; metallic thin films; nickel compounds; platinum; rapid thermal annealing; semiconductor device breakdown; silicon; 0.71 eV; 50 V; 600 to 850 C; 80 V; I-V characteristics; Ni-Pt-Ni-Si; Ni-Pt-Si film; Ni-Pt-Si-Si Schottky barrier diode; NiSi film; Schottky barrier height; deep trench; epitaxial substrate; guard ring; high resistance phase; impurity concentration; low resistance phase; reverse breakdown voltage; sheet resistance; transformation temperature; Annealing; Electrical resistance measurement; Etching; Nickel; Schottky barriers; Schottky diodes; Semiconductor films; Silicides; Stress; Temperature;
Conference_Titel :
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN :
0-7803-8511-X
DOI :
10.1109/ICSICT.2004.1435047
