• DocumentCode
    435774
  • Title

    Atomic layer deposition: a film technology for the nano device era

  • Author

    Seidel, Thomas E.

  • Author_Institution
    Genus Inc., Sunnyvale, CA, USA
  • Volume
    1
  • fYear
    2004
  • fDate
    18-21 Oct. 2004
  • Firstpage
    476
  • Abstract
    Atomic layer deposition (ALD) is emerging as an enabling thin film deposition technology for making semiconductor devices below 100nm design rules and for thin film head sensors (data storage) above 40GB/in2. This paper reviews the historical context of ALD as well as important critical ALD applications. Dielectrics for high topology DRAM capacitors, advanced high-k gate and barriers for interconnect use are discussed. Finally, recent enhanced ALD deposition rate pathways are reviewed.
  • Keywords
    atomic layer deposition; dielectric materials; nanotechnology; semiconductor technology; thin films; atomic layer deposition; data storage; enhanced ALD deposition rate pathway; film technology; high topology DRAM capacitors; nano device; semiconductor devices; thin film deposition technology; thin film head sensors; Atomic layer deposition; Dielectric thin films; Memory; Semiconductor devices; Semiconductor films; Semiconductor thin films; Sputtering; Thin film devices; Thin film sensors; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
  • Print_ISBN
    0-7803-8511-X
  • Type

    conf

  • DOI
    10.1109/ICSICT.2004.1435051
  • Filename
    1435051
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=435774