DocumentCode
435790
Title
Single-wafer manufacturing technologies in 300-mm wafer fab
Author
Ikeda, Shuji
Author_Institution
Trecenti Technol., Inc., Ibaraki, Japan
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
583
Abstract
In this paper we describe a new technology implemented with all single-wafer processing in a 300-mm wafer fab. Fully automated manufacturing line is designed to reduce both cycle time and operators. The process has been re-integrated to eliminate all of long-time processes. New cleaning solutions reduce process time drastically and enable us to realize single-wafer wet clean process. Long rinse time is found to cause surface roughness on silicon substrate and degrade device performance. Higher reliability on gate oxide and higher performance of devices are achieved with single-wafer wet clean system. As the results, a very aggressive cycle time has been achieved with high yield and excellent reliability.
Keywords
cleaning; semiconductor process modelling; silicon; surface roughness; surface treatment; 300-mm wafer fab; device performance degradation; manufacturing line automation; process re-integration; process time reduction; silicon substrate; single-wafer manufacturing technology; single-wafer processing; single-wafer wet clean process; surface roughness; Annealing; Costs; Dry etching; Manufacturing automation; Manufacturing processes; Oxidation; Pulp manufacturing; Remotely operated vehicles; Silicon; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435074
Filename
1435074
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