DocumentCode
435804
Title
The prospect on semiconductor memory in nano era
Author
Kim, Kinam ; Koh, Gwanhyeob
Author_Institution
Memory Div., Samsung Electron. Co., Yongin, South Korea
Volume
1
fYear
2004
fDate
18-21 Oct. 2004
Firstpage
662
Abstract
For the prospects on future semiconductor memory, the key technical limits of future technology scaling in conventional memories and the directions to overcome the problems are reviewed. In addition, we reviewed the technical challenges and opportunities of emerging new memories such as FRAM (ferroelectric RAM), MRAM (magnetic RAM) and PRAM (phase-change RAM) which has been recently focused as candidates for idea memory which can solve the problems of conventional memories.
Keywords
nanotechnology; random-access storage; ferroelectric RAM; magnetic RAM; nanoelectronics; phase-change RAM; semiconductor memory; Costs; Degradation; Doping; Ferroelectric films; FinFETs; Nonvolatile memory; Phase change random access memory; Random access memory; Read-write memory; Semiconductor memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th International Conference on
Print_ISBN
0-7803-8511-X
Type
conf
DOI
10.1109/ICSICT.2004.1435092
Filename
1435092
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